Title :
Computer simulation of ion implantation at grazing ion-surface interactions
Author :
Dzhurakhalov, Abduauf A. ; Umarov, Farid F.
Author_Institution :
Inst. of Electron., Tashkent, Uzbekistan
Abstract :
The peculiarities of ion implantation into the one-component and binary crystal surface under conditions of low-energy ion bombardment at grazing incidence have been investigated by computer simulation. The depth distributions of 5 keV Ar ions implanted into Cu(001) surface and 1 keV Be and Se ions implanted into GaAs(001) for a range of grazing angles of incidence (3-30°) have been calculated and presented
Keywords :
III-V semiconductors; beryllium; copper; gallium arsenide; ion implantation; ion-surface impact; physics computing; selenium; semiconductor doping; 1 keV; 5 keV; Cu:Ar; GaAs:Be; GaAs:Se; binary crystal surface; computer simulation; depth distributions; grazing ion-surface interactions; ion implantation; low-energy ion bombardment; one-component crystal surface; Application software; Argon; Computer simulation; Epitaxial growth; Ion beams; Ion implantation; Lattices; Physics; Sputtering; Surface topography;
Conference_Titel :
Ion Implantation Technology, 2000. Conference on
Conference_Location :
Alpbach
Print_ISBN :
0-7803-6462-7
DOI :
10.1109/IIT.2000.924132
