• DocumentCode
    3113353
  • Title

    Modeling of implanted ion distribution in AIIIBV semiconductors

  • Author

    Didenko, S.I. ; Koltsov, G.I. ; Khodyrev, V.A. ; Yurchuk, S.Y.

  • Author_Institution
    Steel & Alloys Inst., Moscow, Russia
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    243
  • Lastpage
    246
  • Abstract
    The depth distribution of Be and Se atoms after the implantation and annealing processes into compounds AIIIBV have been determined using the SIMS technique. The results are compared with the respective computer simulation
  • Keywords
    III-V semiconductors; annealing; boron; doping profiles; gallium arsenide; gallium compounds; indium compounds; ion implantation; mass spectroscopic chemical analysis; secondary ion mass spectra; selenium; semiconductor doping; AIIIBV semiconductors; B depth distribution; GaAs:Be; GaAs:Se; GaP:Be; GaP:Se; InAs:Be; InAs:Se; InP:Be; InP:Se; SIMS technique; Se depth distribution; annealing processes; computer simulation; implanted ion distribution; modeling; Annealing; Atomic measurements; Computer simulation; Energy loss; Fabrication; Gallium arsenide; Hydrogen; Ion implantation; Protection; Semiconductor devices;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Ion Implantation Technology, 2000. Conference on
  • Conference_Location
    Alpbach
  • Print_ISBN
    0-7803-6462-7
  • Type

    conf

  • DOI
    10.1109/.2000.924135
  • Filename
    924135
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3113353