Title :
Role of buried oxide microstructure in dosimetry of implanted oxygen in SIMOX technology
Author :
Anc, M.J. ; Matthews, B. ; Dolan, R.P.
Author_Institution :
Ibis Technol. Corp., Danvers, MA, USA
Abstract :
In this paper, we present and discuss the role of the microstructure of the buried oxide of standard dose SIMOX in controlling of the accuracy and reproducibility of the implanted oxygen dose in SIMOX technology. Specific effects of implant process conditions on the buried oxide microstructure are shown. The discussion is supported by the data from large number of processes. Implications for low dose SIMOX manufacture are addressed
Keywords :
SIMOX; buried layers; crystal microstructure; dosimetry; elemental semiconductors; interface structure; ion implantation; silicon; silicon compounds; SIMOX technology; Si-SiO2; Si:O-SiO2; buried oxide microstructure; dosimetry; implant process conditions; implanted oxygen; implanted oxygen dose; low dose SIMOX manufacture; standard dose SIMOX; Annealing; Calibration; Current measurement; Dosimetry; Implants; Microstructure; Oxygen; Reproducibility of results; Silicon on insulator technology; Temperature sensors;
Conference_Titel :
Ion Implantation Technology, 2000. Conference on
Conference_Location :
Alpbach
Print_ISBN :
0-7803-6462-7
DOI :
10.1109/.2000.924140
