Dependence of threshold current density on quantum well composition for compressive strained-layer AlxGayIn1−x−yAs lasers

Author

Sapkota, Durga Prasad ; Kayastha, Madhu Sudan ; Wakita, Koichi

Author_Institution

Dept. of Electr. & Electron. Eng., Chubu Univ., Kasugai, Japan

fYear

2010

fDate

May 31 2010-June 4 2010

Firstpage

1

Lastpage

4

Abstract

Separate confinement AlGaInAs/InP compressive strained quantum well lasers especially in the wavelength range of 1.55 μm and 1.3 μm with 7.6 nm well thick have been studied. Threshold current density and emission wavelengths have been calculated as a function of well composition. A minimum of threshold current density of 146 Acm^-2 was obtained for the devices with Al_0.1Ga_0.16In_0.74As well which is the lowest value ever reported at this well composition.

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; quantum well lasers; AlGaInAs-InP; compressive strained-layer lasers; quantum well composition; quantum well lasers; size 7.6 nm; threshold current density; wavelength 1.3 mum; wavelength 1.55 mum; Charge carrier processes; Conducting materials; Electrons; Indium phosphide; Potential well; Quantum well lasers; Semiconductor lasers; Temperature; Thermoelectricity; Threshold current;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide & Related Materials (IPRM), 2010 International Conference on

Conference_Location

Kagawa

ISSN

1092-8669

Print_ISBN

978-1-4244-5919-3

Type

conf

DOI

10.1109/ICIPRM.2010.5516084

Filename

5516084