A plasma immersion ion implantation system for SOI wafer fabrication

Author

Feng, L.M. ; Lamm, A.J. ; Liu, W. ; Garces, E. ; Chan, C. ; Current, M.I. ; Henley, F.J.

Author_Institution

Silicon Genesis Corp., Campbell, CA, USA

fYear

2000

fDate

2000

Firstpage

289

Lastpage

292

Abstract

Plasma immersion ion implantation (PIII) offers certain enabling advantages in several areas over a conventional beamline ion implanter: implant time independent of substrate size, lower costs, and higher dose rate. Silicon Genesis´ novel Protonic Mode^TM technology achieves ion density exceeding 10¹² cm^-3, H⁺/H₂⁺ ion mass purity ratio at greater than 100:1, and is cluster-tool compatible. At ⩽5 kV implant potentials, SiGen´s PIII achieves average currents in excess of 150 mA, with an estimated hydrogen ion current of >50 mA

Keywords

elemental semiconductors; ion implantation; plasma materials processing; silicon; silicon compounds; silicon-on-insulator; 150 mA; 5 kV; 50 mA; H⁺/H₂⁺ ion mass purity ratio; PIII; Protonic Mode technology; SOI wafer fabrication; Si:O-SiO₂; cluster-tool compatibility; cost; currents; dose rate; hydrogen ion current; implant potentials; implant time; ion density; plasma immersion ion implantation system; Doping; Fabrication; Implants; Plasma accelerators; Plasma applications; Plasma density; Plasma immersion ion implantation; Plasma sheaths; Plasma sources; Silicon on insulator technology;

fLanguage

English

Publisher

ieee

Conference_Titel

Ion Implantation Technology, 2000. Conference on

Conference_Location

Alpbach

Print_ISBN

0-7803-6462-7

Type

conf

DOI

10.1109/.2000.924146

Filename

924146