Decaborane ion implantation

The continued scaling of integrated circuit devices has resulted in the need for lower and lower implant energy capabilities. The difficulties associated with extraction and transport of low energy beams have lead to research in novel techniques for ultra low energy implantation. Results from one such technique, decaborane ion implantation, are reported here. Decaborane is a molecule with 10 boron atoms that has been proposed as an implant feed material to overcome the low energy beam problems. Decaborane implants into 200 mm wafers were performed for the first time using an Eaton high current implanter. High-resolution beam spectra that reveal the details of a decaborane ion beam are shown. Data from the implanted wafers will be compared with data from reference boron implanted wafers performed on an Eaton ULE2 ion implanter. The comparison includes surface resistivity maps and SIMS profiles at 500 eV equivalent energy and demonstrates equivalence between the two implantation methods. We will also present transistor data from devices fabricated with decaborane implants