Epi-replacement in CMOS technology by high dose, high energy boron implantation into Cz substrates

We implanted high energy boron to create a heavily doped ground plane in Cz wafers to replace p/p+ epi-substrates in CMOS technology. Devices manufactured on Cz wafers with a 1.5 MeV, 1×10¹⁵cm^-2 boron implanted ground plane have superior latch-up immunity as compared to devices on epi-wafers. Improvements in latch-up suppression were observed for all isolation spacings. Diode leakage was lower in high dose buried layer substrates than in epi substrates, while gate oxide integrity was equivalent. For the first time, buried layer substrates have been shown to duplicate or exceed the performance of epi silicon simultaneously for all relevant CMOS transistor and circuit parameters