Investigation of regrowth interface quality of AlGaInAs/InP buried heterostructure lasers

Author

Takino, Yuta ; Shirao, Mizuki ; Sato, Takashi ; Nishiyama, Nobuhiko ; Arai, Shigehisa

Author_Institution

Dept. of Electr. & Electron. Eng., Tokyo Inst. of Technol., Tokyo, Japan

fYear

2010

fDate

May 31 2010-June 4 2010

Firstpage

1

Lastpage

4

Abstract

1.3-μm AlGaInAs/InP buried heterostructure lasers were prepared by a low-pressure organo-metallic vapor-phase-epitaxy with in-situ thermal cleaning. The regrowth interface quality dependence on thermal cleaning time has been investigated from their lasing properties as well as electroluminescence property below the threshold. As the results, under condition of PH₃ atmosphere in the organo-metallic vapor-phase-epitaxy (OMVPE) reactor at a fixed temperature of 450 °C for 60 min cleaning time, successful operation with the internal quantum efficiency of around 81 % and the differential quantum efficiency of 63 % were obtained for the cavity length of 500 μm with cleaved facets.

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; semiconductor lasers; AlGaInAs-InP; buried heterostructure lasers; electroluminescence property; low-pressure organo-metallic vapor-phase-epitaxy; organo-metallic vapor-phase-epitaxy reactor; regrowth interface quality; temperature 450 C; thermal cleaning; time 60 min; wavelength 1.3 mum; wavelength 500 mum; Cleaning; Electrodes; Fiber lasers; Indium phosphide; Inductors; Optical device fabrication; Optical fiber communication; Power generation; Quantum well lasers; Semiconductor lasers; AlGaInAs/InP; Buried-Heterostructure; OMVPE; Thermal Cleaning;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide & Related Materials (IPRM), 2010 International Conference on

Conference_Location

Kagawa

ISSN

1092-8669

Print_ISBN

978-1-4244-5919-3

Type

conf

DOI

10.1109/ICIPRM.2010.5516092

Filename

5516092