Gettering and annealing of silicon planar surface layer caused by opposite side implantation technique

The paper provides the results of investigation of gettering and annealing of implanted silicon layers stimulated by high intensity ion implantation (HIII) of it´s opposite side with different ions. It was shown that the energy of these high density ion beams can be successfully used for annealing of implanted layers with high ramp-up rates which leads to the formation of shallow junctions with efficient activation of dopants. At the same time if electrically active ions were used in HIII, a perfect single crystal layer with almost fully activated impurity was fabricated. All experimental results approved the existence of ion-induced mechanisms that accelerated recrystallization and electrical activation processes on both surfaces of the wafer