DocumentCode :
3113800
Title :
Selective etching and polymer deposition on InP surface in CH4/H2-RIE
Author :
Yamamoto, Norio
Author_Institution :
NTT Photonics Labs., NTT Corp., Atsugi, Japan
fYear :
2010
fDate :
May 31 2010-June 4 2010
Firstpage :
1
Lastpage :
4
Abstract :
We conducted a preliminary study of selective etching and polymer deposition for fabricating Bragg gratings with varied depths in InP by using reactive ion etching (RIE) with methane (CH4). We obtained selectivity in a submicrometer-pitch grating: the InP was etched in the window of the grating in the region with a thick layer, while it was not etched and polymer was deposited in the region without the thick layer. We also found that the selectivity depends on the plasma pressure in RIE.
Keywords :
Bragg gratings; III-V semiconductors; indium compounds; semiconductor growth; sputter etching; Bragg gratings; InP; methane; polymer deposition; reactive ion etching; selective etching; submicrometer-pitch grating; Bragg gratings; Etching; Hydrogen; Indium phosphide; Optical device fabrication; Optical devices; Plasma applications; Plasma chemistry; Polymers; Surface morphology;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide & Related Materials (IPRM), 2010 International Conference on
Conference_Location :
Kagawa
ISSN :
1092-8669
Print_ISBN :
978-1-4244-5919-3
Type :
conf
DOI :
10.1109/ICIPRM.2010.5516100
Filename :
5516100
Link To Document :
بازگشت