Introduction of the Varian VIISta 3000 single wafer high-energy ion implanter

Varian Semiconductor Equipment Associates, Inc. has developed the VIISta 3000 single wafer high-energy ion implanter to meet requirements of advanced 200 and 300 mm wafer processes. The basic design of this system consists of well established Tandetron^TM DC beamline architecture, the electrostatic beam scanning and dose control system developed for the VIISta 810 medium current ion implanter and the common endstation and control system developed for VIISta series ion implanters. Enabling transportation of the positive beam directly from the ion source to the wafer has significantly enhanced the low energy beam performance. This paper describes basic system design and performance of the VIISta 3000 high-energy ion implanter including the beam current performance, implant uniformity, dose shift due to photoresist outgassing, etc