New design of a decelerator module for ultra low energy implantation

A new decelerator system has been successfully designed, fabricated and tested. This module can extend the energy range of any ion implanter down to 0.6 keV by simply replacing the end station. Boron profiles implanted either into preamorphized or crystalline silicon exhibit excellent characteristics. P⁺/n junctions with depth smaller than 50 nm are obtained after activation annealing. An amount of non-decelerated neutral atoms smaller than about 0.2% is measured. A sheet resistivity of 710 Ω/□ and a good uniformity of about 9% are extracted. These results make this module attractive for developers involved in testing future devices and after improvement, could be used for low throughput production and R&D at low cost