DocumentCode
3114006
Title
Extension of the MOSART circuit simulator to the analysis of BiCMOS circuits
Author
Vachoux, A. ; Anwar, N.
Author_Institution
Dept. of Electr. Eng., CIRC, Swiss Federal Inst. of Technol., Lausanne, Switzerland
fYear
1990
fDate
29 May-1 Jun 1990
Firstpage
350
Lastpage
353
Abstract
MOSART is a MOS-VLSI time-domain simulator which implements the waveform relaxation analysis technique. The extension of the simulator to mixed bipolar-MOS circuits presented in this paper makes use of the particular structure of such circuits to decompose them without `breaking´ the bipolar transistors. A modified decomposition algorithm along with some application examples are also presented
Keywords
BIMOS integrated circuits; application specific integrated circuits; circuit CAD; digital simulation; BiCMOS circuits; MOS-VLSI time-domain simulator; MOSART circuit simulator; decomposition algorithm; mixed bipolar-MOS circuits; waveform relaxation analysis technique; Analytical models; BiCMOS integrated circuits; Bipolar transistors; Capacitance; Circuit analysis; Circuit simulation; Coupling circuits; Differential equations; Time domain analysis; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Euro ASIC '90
Conference_Location
Paris
Print_ISBN
0-8186-2066-8
Type
conf
DOI
10.1109/EASIC.1990.207967
Filename
207967
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