DocumentCode :
3114352
Title :
Air-bridge contact fabrication for in-plane active photonic crystal devices
Author :
Kaspar, P. ; Kappeler, R. ; Friedli, P. ; Jaeckel, H.
Author_Institution :
Electron. Lab. (IfE), ETH Zurich, Zurich, Switzerland
fYear :
2010
fDate :
May 31 2010-June 4 2010
Firstpage :
1
Lastpage :
4
Abstract :
The fabrication of air-bridge contacts for in-plane active photonic crystal devices is presented. The technology allows to access waveguides as narrow as 200 nm. The main fabrication challenges described in detail are surface planarization and formation of isolation layers for contact pads. The issue of surface damage effects on dry-etched sidewalls is addressed and current measurements on narrow contacts were performed.
Keywords :
electrical contacts; photonic crystals; planarisation; air-bridge contact fabrication; contact pads; current measurements; dry-etched sidewalls; in-plane active photonic crystal devices; isolation layers; narrow contacts; surface damage effects; surface planarization; Contacts; Etching; Indium phosphide; Optical device fabrication; Optical surface waves; Optical waveguides; Photonic crystals; Planarization; Semiconductor materials; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide & Related Materials (IPRM), 2010 International Conference on
Conference_Location :
Kagawa
ISSN :
1092-8669
Print_ISBN :
978-1-4244-5919-3
Type :
conf
DOI :
10.1109/ICIPRM.2010.5516124
Filename :
5516124
Link To Document :
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