Investigation of hot electron luminescence in silicon by means of dual-gate MOSFET´s

This paper contributes to the experimental analysis of hot-carrier induced photon emission from silicon devices by reporting integral and spectrally resolved light intensity measurements on dual gate n-MOSFET´s. Exploiting the peculiar possibility, typical of this device structure, to move the light emission point between regions featuring significantly different doping concentrations, new insight is obtained on the contribution of radiative recombinations and ionized impurity assisted intraband transitions to the emitted light intensity.