Title :
Phosphorus ion shower implantation for special power IC applications
Author :
Kröner, F. ; Schork, R. ; Frey, L. ; Burenkov, A. ; Ryssel, H.
Author_Institution :
Infineon Villach AG, Austria
Abstract :
Ion shower implantation (ISI) shows advantages of both ion implantation and plasma immersion doping and is, therefore, a promising alternative doping method for high dose and low energy implants. Applications of ion shower implantation to power electronics are demonstrated in this paper with special emphasis to low sheet- and contact resistance resulting in improved performance compared to conventional implantation
Keywords :
contact resistance; ion implantation; phosphorus; plasma materials processing; power integrated circuits; semiconductor doping; P ion shower implantation; Si:P; contact resistance; doping method; high dose; ion implantation; low energy implants; plasma immersion doping; power electronics; sheet resistance; special power IC applications; Acceleration; Doping; Electrodes; Intersymbol interference; Ion beams; Ion implantation; Plasma immersion ion implantation; Plasma sources; Power integrated circuits; Silicon;
Conference_Titel :
Ion Implantation Technology, 2000. Conference on
Conference_Location :
Alpbach
Print_ISBN :
0-7803-6462-7
DOI :
10.1109/.2000.924191
