Investigation of SiO2 on AlGaAs prepared by liquid phase deposition

Author

Lee, Kuan-Wei ; Huang, Jung-Sheng ; Lu, Yu-Lin ; Lee, Fang-Ming ; Lin, Hsien-Cheng ; Huang, Jian-Jun ; Wang, Yeong-Her

Author_Institution

Dept. of Electron. Eng., I-Shou Univ., Kaohsiung, Taiwan

fYear

2010

fDate

May 31 2010-June 4 2010

Firstpage

1

Lastpage

4

Abstract

The liquid phase deposition (LPD) was used to deposit silicon oxide (SiO₂) layer on AlGaAs near room temperature. The LPD method is not only simple but also can obtain the SiO₂ very economically. Both the aqueous solution of hydro-fluosilicic acid (H₂SiF₆) and boric acid (H₃BO₃) were used for the LPD solution. After rapid temperature annealing (RTA) at 300°C for 1 min, the leakage current density is ~ 4.24 × 10^-7 A/cm² at 1 MV/cm, and the interface trap density is ~ 1.7 × 10¹¹ cm^-2eV^-1 for the LPD-SiO₂ thickness of 29 nm.

Keywords

III-V semiconductors; MIS structures; aluminium compounds; current density; gallium arsenide; insulating thin films; interface states; leakage currents; liquid phase deposition; rapid thermal annealing; semiconductor-insulator boundaries; silicon compounds; AlGaAs; H₂SiF₆ solution; H₃BO₃ solution; LPD method; MOS structure; RTA; SiO₂-AlGaAs; boric acid solution; hydrofluosilicic acid aqueous solution; interface trap density; leakage current density; liquid phase deposition; metal-oxide-semiconductor structure; rapid temperature annealing; silicon oxide layer thickness; temperature 300 degC; time 1 min; Chemical analysis; Chemical vapor deposition; Control systems; Gallium arsenide; Hafnium; Leakage current; Plasma sources; Plasma temperature; Refractive index; Temperature control;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide & Related Materials (IPRM), 2010 International Conference on

Conference_Location

Kagawa

ISSN

1092-8669

Print_ISBN

978-1-4244-5919-3

Type

conf

DOI

10.1109/ICIPRM.2010.5516132

Filename

5516132