Title :
Investigation of SiO2 on AlGaAs prepared by liquid phase deposition
Author :
Lee, Kuan-Wei ; Huang, Jung-Sheng ; Lu, Yu-Lin ; Lee, Fang-Ming ; Lin, Hsien-Cheng ; Huang, Jian-Jun ; Wang, Yeong-Her
Author_Institution :
Dept. of Electron. Eng., I-Shou Univ., Kaohsiung, Taiwan
fDate :
May 31 2010-June 4 2010
Abstract :
The liquid phase deposition (LPD) was used to deposit silicon oxide (SiO2) layer on AlGaAs near room temperature. The LPD method is not only simple but also can obtain the SiO2 very economically. Both the aqueous solution of hydro-fluosilicic acid (H2SiF6) and boric acid (H3BO3) were used for the LPD solution. After rapid temperature annealing (RTA) at 300°C for 1 min, the leakage current density is ~ 4.24 × 10-7 A/cm2 at 1 MV/cm, and the interface trap density is ~ 1.7 × 1011 cm-2eV-1 for the LPD-SiO2 thickness of 29 nm.
Keywords :
III-V semiconductors; MIS structures; aluminium compounds; current density; gallium arsenide; insulating thin films; interface states; leakage currents; liquid phase deposition; rapid thermal annealing; semiconductor-insulator boundaries; silicon compounds; AlGaAs; H2SiF6 solution; H3BO3 solution; LPD method; MOS structure; RTA; SiO2-AlGaAs; boric acid solution; hydrofluosilicic acid aqueous solution; interface trap density; leakage current density; liquid phase deposition; metal-oxide-semiconductor structure; rapid temperature annealing; silicon oxide layer thickness; temperature 300 degC; time 1 min; Chemical analysis; Chemical vapor deposition; Control systems; Gallium arsenide; Hafnium; Leakage current; Plasma sources; Plasma temperature; Refractive index; Temperature control;
Conference_Titel :
Indium Phosphide & Related Materials (IPRM), 2010 International Conference on
Conference_Location :
Kagawa
Print_ISBN :
978-1-4244-5919-3
DOI :
10.1109/ICIPRM.2010.5516132
