Contamination control in a pulsed plasma doping tool

Author

Walther, Steve ; Liebert, Reuel B. ; Felch, Susan ; Fang, Ziwei ; Koo, Bon Woong

Author_Institution

Varian Semicond. Equip. Assoc. Inc., Gloucester, MA, USA

fYear

2000

fDate

2000

Firstpage

500

Lastpage

503

Abstract

Pulsed plasma doping offers a number of compelling benefits for low energy implantation, such as throughput, simplicity and low risk to wafers. The compromise to plasma-based doping systems is the absence of mass selection and increased sensitivity to system contaminants. To quantify the level of contamination present, secondary ion mass spectroscopy (SIMS) measurements of boron and arsenic implantation for sub-keV energies up to 5 keV are presented. Preliminary data show the depth profile of contaminants is consistent with surface contamination from nonionized sputtered material. Initial results for particulate contamination measurements are also described

Keywords

arsenic; boron; elemental semiconductors; ion implantation; plasma materials processing; secondary ion mass spectra; silicon; surface contamination; As implantation; B implantation; SIMS; Si; Si wafer; Si:As; Si:B; contaminant depth profile; contamination control; low energy implantation; low wafer risk; nonionized sputtered material; particulate contamination; pulsed plasma doping tool; secondary ion mass spectroscopy; surface contamination; Boron; Doping; Energy measurement; Mass spectroscopy; Particle measurements; Plasma immersion ion implantation; Plasma measurements; Pollution measurement; Surface contamination; Throughput;

fLanguage

English

Publisher

ieee

Conference_Titel

Ion Implantation Technology, 2000. Conference on

Conference_Location

Alpbach

Print_ISBN

0-7803-6462-7

Type

conf

DOI

10.1109/.2000.924197

Filename

924197