Tunable monolithic Fabry-Perot filter manufactured by selective etching of InGaAs/InP epitaxial films

Author

Chitica, N. ; Streubel, K. ; Andre, J.

Author_Institution

Dept. of Electron., R. Inst. of Technol., Kista, Sweden

fYear

1997

fDate

11-15 May 1997

Firstpage

115

Lastpage

117

Abstract

With this paper we report the successful manufacturing of a monolithic Fabry-Perot tunable filter. The filter consists of an air-gap cavity defined between two high reflectance Bragg mirrors. The top mirror is placed on an InP bridge which can be actuated electrostatically. When biased, the bridge moves towards the substrate, reducing the length of the cavity and tuning the resonance wavelength. The air-gap cavity was manufactured by wet etching of InGaAs epitaxial layers with excellent selectivity to InP and InGaAsP. The bottom mirror is a high reflectance 50 periods InGaAsP/InP Bragg reflector. The resonance dip of the cavity is less than 3 Å wide. A tuning range of 30 nm was demonstrated for a bias voltage of up to 25 V

Keywords

Fabry-Perot resonators; III-V semiconductors; electro-optical filters; etching; gallium arsenide; indium compounds; integrated optics; optical fabrication; semiconductor epitaxial layers; 25 V; Bragg mirror; InGaAs/InP epitaxial film; InGaAsP-InP; air-gap cavity; bridge; electrostatic actuation; manufacture; reflectance; selective wet etching; tunable monolithic Fabry-Perot filter; Air gaps; Bridge circuits; Fabry-Perot; Filters; Indium phosphide; Mirrors; Pulp manufacturing; Reflectivity; Resonance; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1997., International Conference on

Conference_Location

Cape Cod, MA

ISSN

1092-8669

Print_ISBN

0-7803-3898-7

Type

conf

DOI

10.1109/ICIPRM.1997.600045

Filename

600045