Dynamic behaviour of the metal heterojunction bipolar transistor

Author

Pelouard, J.L. ; Teissier, R. ; Matine, N. ; Pardo, F.

Author_Institution

CNRS, Bagneux, France

fYear

1997

fDate

11-15 May 1997

Firstpage

169

Lastpage

172

Abstract

In this paper the intrinsic dynamic behavior of the metal heterojunction bipolar transistor (MHBT) is studied. Non-equilibrium electron transport in the base is characterized by electroluminescence. Clear evidence of ballistic transport in MHBT´s is shown even at room temperature. The ballistic length is found equal to 17.8 nm in p-InGaAs (N_A=10¹⁹ cm^-3). Based on these experimental results, an analytical model is developed in order to predict the transit times in both the base and the base-collector space charge layer of the MHBTs

Keywords

III-V semiconductors; carrier lifetime; electroluminescence; gallium arsenide; heterojunction bipolar transistors; indium compounds; semiconductor device models; space charge; 17.8 nm; InGaAs-InP; InGaAs/InP; InP; analytical model; ballistic length; ballistic transport; base-collector space charge layer; electroluminescence; intrinsic dynamic behavior; metal heterojunction bipolar transistor; nonequilibrium electron transport; p-InGaAs; transit times; Analytical models; Bipolar transistors; Cutoff frequency; Electrons; Epitaxial layers; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Space charge; Space technology;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1997., International Conference on

Conference_Location

Cape Cod, MA

ISSN

1092-8669

Print_ISBN

0-7803-3898-7

Type

conf

DOI

10.1109/ICIPRM.1997.600081

Filename

600081