DocumentCode :
311468
Title :
Dynamic behaviour of the metal heterojunction bipolar transistor
Author :
Pelouard, J.L. ; Teissier, R. ; Matine, N. ; Pardo, F.
Author_Institution :
CNRS, Bagneux, France
fYear :
1997
fDate :
11-15 May 1997
Firstpage :
169
Lastpage :
172
Abstract :
In this paper the intrinsic dynamic behavior of the metal heterojunction bipolar transistor (MHBT) is studied. Non-equilibrium electron transport in the base is characterized by electroluminescence. Clear evidence of ballistic transport in MHBT´s is shown even at room temperature. The ballistic length is found equal to 17.8 nm in p-InGaAs (NA=1019 cm-3). Based on these experimental results, an analytical model is developed in order to predict the transit times in both the base and the base-collector space charge layer of the MHBTs
Keywords :
III-V semiconductors; carrier lifetime; electroluminescence; gallium arsenide; heterojunction bipolar transistors; indium compounds; semiconductor device models; space charge; 17.8 nm; InGaAs-InP; InGaAs/InP; InP; analytical model; ballistic length; ballistic transport; base-collector space charge layer; electroluminescence; intrinsic dynamic behavior; metal heterojunction bipolar transistor; nonequilibrium electron transport; p-InGaAs; transit times; Analytical models; Bipolar transistors; Cutoff frequency; Electrons; Epitaxial layers; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Space charge; Space technology;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials, 1997., International Conference on
Conference_Location :
Cape Cod, MA
ISSN :
1092-8669
Print_ISBN :
0-7803-3898-7
Type :
conf
DOI :
10.1109/ICIPRM.1997.600081
Filename :
600081
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=311468
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