• DocumentCode
    311471
  • Title

    Bulk ternary indium phosphide arsenide, InP1-xAsx : growth and characterization

  • Author

    Bonner, W.A.

  • Author_Institution
    Crystallod Inc., Somerville, NJ, USA
  • fYear
    1997
  • fDate
    11-15 May 1997
  • Firstpage
    205
  • Lastpage
    208
  • Abstract
    In(P,As) bulk ternary single crystal growth has been demonstrated using the liquid encapsulated Czochralski (LEC) technique with both InP and ternary In(P,As) seeds. Arsenic concentrations to nominally 10% have been achieved. While problems related to cracking and compositional uniformity exist, the single crystals are capable of producing wafers and bulk material for characterization and preliminary device studies. Optical and electrical measurements are reported
  • Keywords
    Hall mobility; III-V semiconductors; carrier density; crystal growth from melt; indium compounds; photoluminescence; semiconductor growth; twinning; As concentrations; Hall effect; InP1-xAsx; InPAs; LEC growth; bulk ternary single crystal growth; carrier concentration; carrier mobility; compositional uniformity; cracking; liquid encapsulated Czochralski technique; photoluminescence; twin structure; wafers; Crystalline materials; Crystals; Gallium arsenide; Gallium compounds; III-V semiconductor materials; Indium phosphide; Lattices; Optical materials; Substrates; Uncertainty;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 1997., International Conference on
  • Conference_Location
    Cape Cod, MA
  • ISSN
    1092-8669
  • Print_ISBN
    0-7803-3898-7
  • Type

    conf

  • DOI
    10.1109/ICIPRM.1997.600094
  • Filename
    600094
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=311471