Residual strain as a measure of wafer quality in indium phosphide crystals

Author

Yamada, M. ; Ito, K. ; Fukuzawa, M.

Author_Institution

Dept. of Electron. & Inf. Sci., Kyoto Inst. of Technol., Japan

fYear

1997

fDate

11-15 May 1997

Firstpage

209

Lastpage

212

Abstract

The quantitative photoelastic technique was utilized to characterize residual strain as a measure of InP wafer quality. A series of standard wafers (Sn-doped, 2-inches, LEC-grown InP) received commercially from four different wafer suppliers were characterized and compared to demonstrate the feasibility of residual strain as the quality measure. In order to understand the residual strain well, the generation mechanism was modeled and explained in conjunction with plastic deformation originating dislocation generation due to thermal stress caused during various processes in crystal growth and device fabrication

Keywords

III-V semiconductors; crystal growth from melt; dislocations; indium compounds; internal stresses; mechanical birefringence; photoelasticity; plastic deformation; semiconductor growth; thermal stresses; tin; InP wafer quality; InP:Sn; Sn-doped LEC-grown InP; crystal growth; device fabrication; dislocation generation; generation mechanism; plastic deformation; quantitative photoelastic technique; residual strain; scanning infrared polariscope; strain distribution; strain induced birefringence; thermal stress; Capacitive sensors; Deformable models; Indium phosphide; Measurement standards; Photoelasticity; Plastics; Residual stresses; Semiconductor device modeling; Strain measurement; Thermal stresses;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1997., International Conference on

Conference_Location

Cape Cod, MA

ISSN

1092-8669

Print_ISBN

0-7803-3898-7

Type

conf

DOI

10.1109/ICIPRM.1997.600096

Filename

600096