Title :
Anisotropic polarization properties of GaInAsP/InP compressively-strained quantum-wire structure
Author :
Kojima, Takashi ; Tamura, Munehisa ; Jia, Xue-Ying ; Nakaya, Hiroyuki ; Ando, Toshikazu ; Tanaka, Suguru ; Tamura, Shigeo ; Arai, Shigehisa ; Bacher, Gerd
Author_Institution :
Res. Center for Quantum Effect Electron., Tokyo Inst. of Technol., Japan
Abstract :
Polarization dependence of 1.55 μm wavelength GaInAsP/InP compressively-strained (CS) quantum-wire laser structures assisted by a quantum-film was measured and compared with quantum-film laser structures fabricated on the same wafer. As a result, better anisotropic polarization properties of the quantum-wire structure were obtained. PL intensity of an electric field perpendicular to the quantum-wire (Q-Wire) was about 60% of that parallel to the Q-Wire. In addition, we fabricated Q-Wire lasers with a wire width of about 25 nm. As a result, a blue shift ΔE~10 meV and a threshold current density Jth =34 A/cm2 at 90 K were obtained
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; light polarisation; photoluminescence; quantum well lasers; semiconductor quantum wires; 1.55 micron; GaInAsP-InP; GaInAsP/InP compressively-strained quantum-wire laser; anisotropic polarization; blue shift; electric field; photoluminescence intensity; quantum film; threshold current density; Anisotropic magnetoresistance; Etching; Fiber lasers; Gas lasers; Indium phosphide; Optical interconnections; Photoluminescence; Polarization; Thickness measurement; Wire;
Conference_Titel :
Indium Phosphide and Related Materials, 1997., International Conference on
Conference_Location :
Cape Cod, MA
Print_ISBN :
0-7803-3898-7
DOI :
10.1109/ICIPRM.1997.600104
