Anisotropic polarization properties of GaInAsP/InP compressively-strained quantum-wire structure

Author

Kojima, Takashi ; Tamura, Munehisa ; Jia, Xue-Ying ; Nakaya, Hiroyuki ; Ando, Toshikazu ; Tanaka, Suguru ; Tamura, Shigeo ; Arai, Shigehisa ; Bacher, Gerd

Author_Institution

Res. Center for Quantum Effect Electron., Tokyo Inst. of Technol., Japan

fYear

1997

fDate

11-15 May 1997

Firstpage

226

Lastpage

229

Abstract

Polarization dependence of 1.55 μm wavelength GaInAsP/InP compressively-strained (CS) quantum-wire laser structures assisted by a quantum-film was measured and compared with quantum-film laser structures fabricated on the same wafer. As a result, better anisotropic polarization properties of the quantum-wire structure were obtained. PL intensity of an electric field perpendicular to the quantum-wire (Q-Wire) was about 60% of that parallel to the Q-Wire. In addition, we fabricated Q-Wire lasers with a wire width of about 25 nm. As a result, a blue shift ΔE~10 meV and a threshold current density J_th=34 A/cm² at 90 K were obtained

Keywords

III-V semiconductors; gallium arsenide; indium compounds; light polarisation; photoluminescence; quantum well lasers; semiconductor quantum wires; 1.55 micron; GaInAsP-InP; GaInAsP/InP compressively-strained quantum-wire laser; anisotropic polarization; blue shift; electric field; photoluminescence intensity; quantum film; threshold current density; Anisotropic magnetoresistance; Etching; Fiber lasers; Gas lasers; Indium phosphide; Optical interconnections; Photoluminescence; Polarization; Thickness measurement; Wire;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1997., International Conference on

Conference_Location

Cape Cod, MA

ISSN

1092-8669

Print_ISBN

0-7803-3898-7

Type

conf

DOI

10.1109/ICIPRM.1997.600104

Filename

600104