• DocumentCode
    3114760
  • Title

    Decaborane ion source demonstration

  • Author

    Vella, Michael C. ; Tysinger, Randy ; Reilly, Michael ; Brown, Bob

  • Author_Institution
    Lawrence Berkeley Nucl. Lab., CA, USA
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    527
  • Lastpage
    529
  • Abstract
    This project demonstrated concept and feasibility of a proprietary high current decaborane ion source suitable for ultra shallow doping. This was motivated by the attractive scaling of decaborane ions for space charge dominated extraction and transport. A highly modified Bernas source was mounted on an NV-10/80 implanter. Using standard extraction and beamline components, 2.3 mA of boron nucleon current was produced in the form of B14Hx+ at 50 kV. Under dense plasma, beam current scaled linearly with extraction voltage
  • Keywords
    ion implantation; ion sources; semiconductor doping; 2.3 mA; 50 kV; NV-10/80 implanter; beam current; dense plasma; extraction voltage; high current decaborane ion source; modified Bernas source; nucleon current; space charge; ultra shallow doping; Boron; Doping; Implants; Ion sources; Physics; Plasma density; Plasma devices; Plasma sources; Plasma transport processes; Space charge;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Ion Implantation Technology, 2000. Conference on
  • Conference_Location
    Alpbach
  • Print_ISBN
    0-7803-6462-7
  • Type

    conf

  • DOI
    10.1109/.2000.924205
  • Filename
    924205
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3114760