Title :
Effect of growth conditions on thermal stress development in high pressure LEC grown InP crystals
Author :
Zou, Y.F. ; Wang, G.-X. ; Zhang, H. ; Prasad, V. ; Bliss, D.F.
Author_Institution :
Consortium for Crystal Growth Res., State Univ. of New York, Stony Brook, NY, USA
Abstract :
In this work, the MASTRAPP model has been used to investigate the effect of growth conditions on the development of thermal stress in a HPLEC grown InP crystal. In particular, it examines the variation of the resulting thermal stress under the conditions of both high and low axial temperature gradients. The effect of melt flow on stress development has also been examined
Keywords :
III-V semiconductors; crystal growth from melt; indium compounds; semiconductor growth; thermal stresses; InP; InP crystal; MASTRAPP mode; axial temperature gradient; high pressure LEC growth; melt flow; thermal stress; Crystals; Fluid flow; Furnaces; Gallium arsenide; Heating; Indium phosphide; Laboratories; Occupational stress; Temperature control; Thermal stresses;
Conference_Titel :
Indium Phosphide and Related Materials, 1997., International Conference on
Conference_Location :
Cape Cod, MA
Print_ISBN :
0-7803-3898-7
DOI :
10.1109/ICIPRM.1997.600125
