Title :
Fabrication of III-V semicondctor nanowires by SA-MOVPE and their applications to photonic and photovoltaic devices
Author :
Fukui, T. ; Tomioka, K. ; Hara, S. ; Hiruma, K. ; Motohisa, J.
Author_Institution :
Res. Center for Integrated Quantum Electron. (RCIQE), Hokkaido Univ., Sapporo, Japan
fDate :
May 31 2010-June 4 2010
Abstract :
We fabricated various kinds of III-V semiconductor nanowires and core-shell nanowires using selective area metalorganic vapor phase epitaxy (SA-MOVPE) on (111) oriented substrates, such as GaAs, GaAs/AlGaAs, InP, InP/InAs/InP on III-V substrates, and InAs and GaAs on Si. As for device applications, we fabricated GaAs/GaAsP core-shell nanowire photo-excited lasers, and InP core-shell pn junction solar cells. I will also introduce III-V semiconductor nanowires grown on Si (111) substrates.
Keywords :
III-V semiconductors; MOCVD; aluminium compounds; elemental semiconductors; gallium arsenide; gallium compounds; indium compounds; nanofabrication; nanowires; p-n junctions; semiconductor growth; semiconductor lasers; semiconductor quantum wires; silicon; solar cells; vapour phase epitaxial growth; (111) oriented substrates; GaAs; GaAs-AlGaAs; GaAs-GaAsP; III-V semiconductor nanowires; III-V substrates; InP; InP-InAs-InP; SA-MOVPE; Si; Si (111) substrates; core-shell nanowire photo-excited lasers; core-shell pn junction solar cells; photonic device application; photovoltaic device application; selective area metalorganic vapor phase epitaxy; Epitaxial growth; Fabrication; Gallium arsenide; III-V semiconductor materials; Indium phosphide; Nanowires; Photovoltaic systems; Semiconductor lasers; Solar power generation; Substrates;
Conference_Titel :
Indium Phosphide & Related Materials (IPRM), 2010 International Conference on
Conference_Location :
Kagawa
Print_ISBN :
978-1-4244-5919-3
DOI :
10.1109/ICIPRM.2010.5516148
