Selective molecular beam epitaxy for formation of networks of InP-based InGaAs/InAlAs quantum wires and dots

Recent intensive research efforts in the study of quantum effects indicate that quantum nanostructures such as quantum wires and quantum dots may become key components of next-generation ultralarge scale integrated circuits based on quantum effects. For realizing such quantum LSIs, it is necessary to establish a suitable technology for formation of networks containing high quality quantum wires and dots with high packing density. For this purpose, selective MBE growth on patterned substrates appears to be promising because damage-free, extremely small and uniform, highly integrated, and position controlled quantum wires and dots can be formed only by the growth procedures. However, so far, there is no reports on selective growth formation of such quantum networks. This paper presents a novel selective MBE growth technology for formation of an InP-based In_0.53Ga_0.47As high quality quantum network. As the building blocks of such a network, the arrays of isolated wires, isolated dots and coupled wire-dot structures were successfully realized by further extending the selective MBE growth process on patterned substrates reported earlier