• DocumentCode
    3114837
  • Title

    Production of multiply charged Si and Fe ions from solid material in a 2.45 GHz electron cyclotron resonance source

  • Author

    Kato, Yushi ; Sugiyama, Saori ; Ishii, Shigeyuki

  • Author_Institution
    Toyama Prefectural Univ., Japan
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    546
  • Lastpage
    549
  • Abstract
    Multiply charged ions of Si and Fe are produced from solid material in a 2.45 GHz electron cyclotron resonance (ECR) ion source. The ECR plasma is confined in the mirror field with the octupole magnetic field. Operating gas is usually Ar. The pure Si or Fe target is inserted into the ECR plasma from the mirror end plate along the geometrical axis; the DC bias voltages are applied for direct sputtering. The charge state distributions (CSD) of the extracted ion current are investigated in various experimental conditions. Multicharged ions up to Si4+ and Fe5+ have been produced by using pure Si and Fe targets, respectively. The operating parameters are mainly DC bias voltages, target positions, pressures, and microwave powers. The ratio of the total multicharged Si ions current to the total Ar ions current is about 13%. We will discuss the dependence of multicharged ion current on various experimental conditions in these experiments
  • Keywords
    ion sources; magnetic mirrors; sputtering; 2.45 GHz; DC bias voltage; ECR plasma; Fe; Si; charge state distributions; direct sputtering; electron cyclotron resonance source; microwave power; multiply charged ions; octupole magnetic field; Argon; Iron; Magnetic materials; Mirrors; Plasma confinement; Plasma materials processing; Plasma sources; Production; Solids; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Ion Implantation Technology, 2000. Conference on
  • Conference_Location
    Alpbach
  • Print_ISBN
    0-7803-6462-7
  • Type

    conf

  • DOI
    10.1109/.2000.924210
  • Filename
    924210