DocumentCode :
3114837
Title :
Production of multiply charged Si and Fe ions from solid material in a 2.45 GHz electron cyclotron resonance source
Author :
Kato, Yushi ; Sugiyama, Saori ; Ishii, Shigeyuki
Author_Institution :
Toyama Prefectural Univ., Japan
fYear :
2000
fDate :
2000
Firstpage :
546
Lastpage :
549
Abstract :
Multiply charged ions of Si and Fe are produced from solid material in a 2.45 GHz electron cyclotron resonance (ECR) ion source. The ECR plasma is confined in the mirror field with the octupole magnetic field. Operating gas is usually Ar. The pure Si or Fe target is inserted into the ECR plasma from the mirror end plate along the geometrical axis; the DC bias voltages are applied for direct sputtering. The charge state distributions (CSD) of the extracted ion current are investigated in various experimental conditions. Multicharged ions up to Si4+ and Fe5+ have been produced by using pure Si and Fe targets, respectively. The operating parameters are mainly DC bias voltages, target positions, pressures, and microwave powers. The ratio of the total multicharged Si ions current to the total Ar ions current is about 13%. We will discuss the dependence of multicharged ion current on various experimental conditions in these experiments
Keywords :
ion sources; magnetic mirrors; sputtering; 2.45 GHz; DC bias voltage; ECR plasma; Fe; Si; charge state distributions; direct sputtering; electron cyclotron resonance source; microwave power; multiply charged ions; octupole magnetic field; Argon; Iron; Magnetic materials; Mirrors; Plasma confinement; Plasma materials processing; Plasma sources; Production; Solids; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Ion Implantation Technology, 2000. Conference on
Conference_Location :
Alpbach
Print_ISBN :
0-7803-6462-7
Type :
conf
DOI :
10.1109/.2000.924210
Filename :
924210
Link To Document :
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