DocumentCode
311485
Title
Commercialisation of InP based epitaxy: state of the art and beyond!
Author
Bland, S.W. ; Davies, J.I. ; Nelson, A.W. ; Rees, P.K. ; Scott, M.D.
Author_Institution
Epitaxial Products International Ltd., Cardiff, UK
fYear
1997
fDate
11-15 May 1997
Firstpage
539
Abstract
Summary form only given. Over the last decade, InP technology and its related Materials have grown enormously in strategic importance as the technology has facilitated the explosive growth in optical fibre telecommunications, which in turn has spawned a huge communications revolution. In addition, InP based materials have been exploited for many other applications such as long wavelength IR detector arrays, gas sensing applications, imaging, solar cells, high speed HEMT and HBTs, high power FETs and several other mm and microwave devices
Keywords
III-V semiconductors; indium compounds; semiconductor epitaxial layers; semiconductor growth; InP; InP technology; commercialisation; epitaxy; optical fibre telecommunication; state of the art; Epitaxial growth; Explosives; Indium phosphide; Infrared detectors; Microwave antenna arrays; Microwave communication; Microwave imaging; Optical fibers; Optical materials; Sensor arrays;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 1997., International Conference on
Conference_Location
Cape Cod, MA
ISSN
1092-8669
Print_ISBN
0-7803-3898-7
Type
conf
DOI
10.1109/ICIPRM.1997.600222
Filename
600222
Link To Document