Title :
All solid source molecular beam epitaxy using valved cracking cells
Author :
Baillargeon, J.N. ; Cho, A.Y. ; Hwang, W.Y. ; Chu, S.N.G.
Author_Institution :
Lucent Technologies, AT&T Bell Labs., Murray Hill, NJ, USA
Abstract :
Uniform growth of GaxIn1-xAsyP 1-y lattice matched to InP is demonstrated with molecular beam epitaxy using all solid sources. Elemental indium and gallium, and arsenic and red phosphorus in conjunction with valved cracking cells are utilized as column III and V sources. Photoluminescence emission measurements show better than 1% reproducibility and a best case wavelength uniformity of 6.5 nm for the quaternary. Fabry-Perot cavity, multi-quantum well, 1.3 μm emission lasers having excellent light-current characteristics were fabricated. The best devices show a transparency current density as low as 55 A/cm2 per well and slope efficiency greater than 0.5 W/A
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; molecular beam epitaxial growth; photoluminescence; quantum well lasers; semiconductor epitaxial layers; semiconductor growth; 1.3 micron; Fabry-Perot cavity; GaInAsP-InP; InP substrate; all solid source molecular beam epitaxy; growth; lattice matched GaInAsP layer; light-current characteristics; multi-quantum well laser; photoluminescence; quaternary material; reproducibility; slope efficiency; transparency current density; valved cracking cell; wavelength uniformity; Current density; Fabry-Perot; Gallium compounds; Indium phosphide; Lattices; Molecular beam epitaxial growth; Photoluminescence; Reproducibility of results; Solids; Wavelength measurement;
Conference_Titel :
Indium Phosphide and Related Materials, 1997., International Conference on
Conference_Location :
Cape Cod, MA
Print_ISBN :
0-7803-3898-7
DOI :
10.1109/ICIPRM.1997.600224
