Surface damage in GaInAsP/InP wire structures by Cl2/H 2-ECR dry etching

We investigated photoluminescence (PL) intensity dependence on the width of GaInAsP/InP wire structures, which were fabricated by an electron cyclotron resonance dry etching (ECR-dry etching) using a mixture of Cl₂/H₂ (small amount of H₂ gas is mixed with Cl₂ gas) as the etching gas. As the result, a reduction of surface damage in GaInAsP/InP wire structures was observed. The S^.τ product, where S is sidewall recombination velocity and τ is the carrier lifetime of the wire structures fabricated using Cl₂/H_z-dry etching and Cl₂-dry etching were estimated to be 92 nm and 130 nm, respectively, under an excitation power of approximately 100 W/cm² (YAG laser, λ=1.06 μm) at 296 K