• DocumentCode
    311488
  • Title

    Low threshold current BH lasers fabricated by UHV chemical beam etching and GSMBE regrowth

  • Author

    Gentner, J-L ; Jarry, Ph ; Tscherptner, N. ; Goldstein, L.

  • Author_Institution
    Alcatel Alsthom Recherche, Marcoussis, France
  • fYear
    1997
  • fDate
    11-15 May 1997
  • Firstpage
    618
  • Lastpage
    620
  • Abstract
    A new chlorine-based chemical beam etching technique (CBET) compatible with MBE or CBE technology has been introduced recently. The process sequence combining these two techniques in the same MBE growth chamber is very attractive for the realisation of high performance discrete or integrated optoelectronic devices. In this paper, we present for the first time results on devices fabricated using this new processing technique. Fabry-Perot type 1.3 and 1.48 μm Buried Heterostructure lasers with low threshold current values have been obtained. Well defined mesa profiles and excellent regrowth morphologies have been obtained. The effect of interface contamination has been pointed out, in particular for the case of silicon for which a direct effect on laser results has been shown
  • Keywords
    III-V semiconductors; chemical beam epitaxial growth; etching; gallium arsenide; indium compounds; optical fabrication; quantum well lasers; semiconductor growth; surface contamination; 1.3 mum; 1.48 mum; 10 mA; Cl-based chemical beam etching technique; Fabry-Perot type buried heterostructure lasers; GSMBE regrowth; InGaAsP-InP; InGaAsP-InP BH laser fabrication; InP:Si; PCl3; UHV chemical beam etching; compressively strained quantum wells; interface contamination; low threshold current; mesa profiles; regrowth morphologies; Chemical lasers; Chemical technology; Contamination; Etching; Fabry-Perot; Integrated optoelectronics; Laser beams; Molecular beam epitaxial growth; Morphology; Threshold current;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 1997., International Conference on
  • Conference_Location
    Cape Cod, MA
  • ISSN
    1092-8669
  • Print_ISBN
    0-7803-3898-7
  • Type

    conf

  • DOI
    10.1109/ICIPRM.1997.600244
  • Filename
    600244