Monolithic InP HEMT/HBT integrated circuit technology by selective molecular beam epitaxy

Author

Cowles, J. ; Lai, R. ; Tran, L. ; Wang, H. ; Chen, Y.C. ; Kobayashi, K. ; Block, T. ; Yen, H.C. ; Liu, P. ; Oki, A. ; Streit, D.

Author_Institution

Electron. Syst. & Technol. Div., TRW Inc., Redondo Beach, CA, USA

fYear

1997

fDate

11-15 May 1997

Firstpage

625

Lastpage

628

Abstract

Co-integration of high performance InP HEMTs and HBTs has been achieved using selective MBE. The merged device technologies maintain the performance of their stand-alone counterparts and show excellent yield and uniformity. The first monolithic integrated circuits featuring both InP HEMTs and HBTs have been presented. The successful merging of these technologies on the same InP substrate represents a significant step towards larger scale millimeter wave integration and innovative system architectures

Keywords

HEMT integrated circuits; III-V semiconductors; MIMIC; bipolar integrated circuits; heterojunction bipolar transistors; indium compounds; integrated circuit measurement; integrated circuit technology; integrated circuit yield; molecular beam epitaxial growth; semiconductor growth; IC performance; InAlAs-InGaAs-InP; InP; co-integration; large scale millimeter wave integration; merged device technologies; monolithic InP HEMT/HBT integrated circuit technology; selective MBE; uniformity; yield; Etching; HEMTs; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Integrated circuit interconnections; Integrated circuit technology; Molecular beam epitaxial growth; Space technology; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1997., International Conference on

Conference_Location

Cape Cod, MA

ISSN

1092-8669

Print_ISBN

0-7803-3898-7

Type

conf

DOI

10.1109/ICIPRM.1997.600247

Filename

600247