Title :
In situ charging potential monitoring for a high current ribbon beam
Author :
Radovanov, Svetlana ; Liebert, Reuel ; Corey, Phil ; Cummings, James ; Angel, Gordon ; Buff, James
Author_Institution :
Varian Semicond. Equipment, Gloucester, MA, USA
Abstract :
We discuss measurements and modeling associated with the high current ion beam space charge neutralization. We show the importance of the electron temperature in maintaining low beam potential and induced voltage on implanted wafers
Keywords :
Monte Carlo methods; ion beam effects; ion implantation; plasma materials processing; plasma temperature; process monitoring; semiconductor doping; semiconductor process modelling; space charge; surface charging; electron temperature; high current ion beam space charge neutralization; high current ribbon beam; implanted wafers; in situ charging potential monitoring; induced voltage; low beam potential; modeling; Electron beams; Floods; Ion beams; Magnetic field measurement; Monitoring; Particle beam measurements; Plasma immersion ion implantation; Plasma measurements; Plasma temperature; Semiconductor device modeling;
Conference_Titel :
Ion Implantation Technology, 2000. Conference on
Conference_Location :
Alpbach
Print_ISBN :
0-7803-6462-7
DOI :
10.1109/.2000.924218
