DocumentCode
3114977
Title
In situ charging potential monitoring for a high current ribbon beam
Author
Radovanov, Svetlana ; Liebert, Reuel ; Corey, Phil ; Cummings, James ; Angel, Gordon ; Buff, James
Author_Institution
Varian Semicond. Equipment, Gloucester, MA, USA
fYear
2000
fDate
2000
Firstpage
577
Lastpage
580
Abstract
We discuss measurements and modeling associated with the high current ion beam space charge neutralization. We show the importance of the electron temperature in maintaining low beam potential and induced voltage on implanted wafers
Keywords
Monte Carlo methods; ion beam effects; ion implantation; plasma materials processing; plasma temperature; process monitoring; semiconductor doping; semiconductor process modelling; space charge; surface charging; electron temperature; high current ion beam space charge neutralization; high current ribbon beam; implanted wafers; in situ charging potential monitoring; induced voltage; low beam potential; modeling; Electron beams; Floods; Ion beams; Magnetic field measurement; Monitoring; Particle beam measurements; Plasma immersion ion implantation; Plasma measurements; Plasma temperature; Semiconductor device modeling;
fLanguage
English
Publisher
ieee
Conference_Titel
Ion Implantation Technology, 2000. Conference on
Conference_Location
Alpbach
Print_ISBN
0-7803-6462-7
Type
conf
DOI
10.1109/.2000.924218
Filename
924218
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