Title :
VIISta 810 dosimetry performance
Author :
Scheuer, J.T. ; Renau, A. ; Olson, J.C. ; Smatlak, D.L. ; Cucchetti, A. ; Sud, R. ; Bustin, R.
Author_Institution :
Varian Semicond. Equipment Associates Inc., Gloucester, MA, USA
Abstract :
Details of the dosimetry system for the Varian VIISta 810 medium current implanter are described. The system design provides improvements to the VSEA E-series implanters. The wafer scan velocity is variable, allowing a better match of the dose to the number of wafer scans, which in turn enables higher wafer throughput. Detailed vertical uniformity information is uploaded to the control system host computer enabling interrupted implants to be completed at another time, even on a different VIISta 810. Data is presented demonstrating the dosimetry performance for top off, glitched and high-tilt implants
Keywords :
dosimetry; ion implantation; particle beam diagnostics; process control; semiconductor doping; VIISta 810 dosimetry performance; VSEA E-series implanters; Varian VIISta 810 medium current implanter; control system host computer; dosimetry system; glitched implants; high-tilt implants; interrupted implants; top off implants; vertical uniformity information; wafer scan velocity; wafer throughput; Computerized monitoring; Control systems; Current measurement; Dosimetry; Finishing; Hardware; Implants; Resists; Sampling methods; Throughput;
Conference_Titel :
Ion Implantation Technology, 2000. Conference on
Conference_Location :
Alpbach
Print_ISBN :
0-7803-6462-7
DOI :
10.1109/.2000.924228
