In-line characterization of preamorphous implants (PAI)

Author

Borden, Peter ; Ferguson, Clarence ; Sing, David ; Larson, Larry ; Bechtler, Laurie ; Jones, Kevin ; Gable, Peter

Author_Institution

Boxer Cross Inc., Menlo Park, CA, USA

fYear

2000

fDate

2000

Firstpage

635

Lastpage

638

Abstract

Amorphous layers formed with Ge implantation into Si over a range of energy (5 to 70 keV) and dose (0.5 to 3×10¹⁵/cm²) were characterized using carrier illumination (CI), variable angle spectroscopic ellipsometry (VASE), and cross-sectional transmission electron microscopy (XTEM). The CI signal varies lineariy with XTEM depth to 860 Å. The VASE response is monotonic, and can be linearized with additional calibration. Both methods are sensitive to amorphous layer depth and exhibit no dose sensitivity. CI is additionally sensitive to depth differences between 0° to 7° implant angles

Keywords

amorphisation; amorphous semiconductors; calibration; elemental semiconductors; ellipsometry; germanium; ion implantation; semiconductor doping; sensitivity; silicon; transmission electron microscopy; CI signal; Si:Ge; VASE response; XTEM depth; amorphous layer depth; amorphous layers; carrier illumination; cross-sectional transmission electron microscopy; implant angle; implantation dose; implantation energy; in-line characterization; preamorphous implants; variable angle spectroscopic ellipsometry; Amorphous materials; Calibration; Electric variables control; Ellipsometry; Implants; Lighting; Process control; Spectroscopy; Transmission electron microscopy; Wavelength measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Ion Implantation Technology, 2000. Conference on

Conference_Location

Alpbach

Print_ISBN

0-7803-6462-7

Type

conf

DOI

10.1109/.2000.924233

Filename

924233