Title :
InAs/InP QDs broadband LED using selective MOVPE growth and double-cap procedure
Author :
Shimomura, K. ; Suzuki, Y. ; Saito, Y. ; Kawashima, F.
Author_Institution :
Dept. Eng. & Appl. Sci., Sophia Univ., Tokyo, Japan
fDate :
May 31 2010-June 4 2010
Abstract :
InAs/InP QDs broadband LED more than 450 nm spectrum width was successfully demonstrated. The broadband spectrum was obtained from the height controlled double-cap procedure and strain controlled buffer layer fabricated by the selective MOVPE technique.
Keywords :
III-V semiconductors; MOCVD; buffer layers; indium compounds; internal stresses; light emitting diodes; semiconductor epitaxial layers; semiconductor growth; semiconductor quantum dots; vapour phase epitaxial growth; InAs-InP; QDs broadband LED; broadband spectrum; height controlled double-cap procedure; selective MOVPE growth; spectrum width; strain controlled buffer layer; Capacitive sensors; Communication system control; Energy states; Epitaxial growth; Epitaxial layers; Indium phosphide; Light emitting diodes; Medical control systems; Optical waveguides; Strain control;
Conference_Titel :
Indium Phosphide & Related Materials (IPRM), 2010 International Conference on
Conference_Location :
Kagawa
Print_ISBN :
978-1-4244-5919-3
DOI :
10.1109/ICIPRM.2010.5516168
