A new tool for nondestructive monitoring of ion implantation

Author

Coleman, P.G. ; Burrows, C.P. ; Knights, A.P. ; Gwilliam, R.M. ; Sealy, B.J. ; Goldberg, R.D. ; Al-Bayati, A. ; Foad, M. ; Murrell, A.

Author_Institution

Dept. of Phys., Bath Univ., UK

fYear

2000

fDate

2000

Firstpage

654

Lastpage

657

Abstract

We describe recent research designed to assess the potential of charged particle beams as an implant-monitoring tool. The technique currently under development, based on positron annihilation spectroscopy, is totally nondestructive, sensitive to implant doses as low as 10⁹ cm^-2, and most importantly, can be tuned to obtain depth-resolved information. A collaborative project between the Surrey Ion Beam Centre and researchers at the University of Bath is underway, aimed at developing a tool suitable for use in the semiconductor industry. A prototype instrument is described, together with preliminary measurements using a laboratory based instrument. Applications to other vacancy-mediated processes, and the value of the new instrument in a research and development environment is discussed

Keywords

doping profiles; ion implantation; nondestructive testing; positron annihilation; process control; Si:B; Surrey Ion Beam Centre; University of Bath; charged particle beams; depth-resolved information; implant-monitoring tool; ion implantation nondestructive monitoring; positron annihilation spectroscopy; vacancy-mediated processes; Collaborative tools; Electronics industry; Implants; Instruments; Ion beams; Ion implantation; Monitoring; Particle beams; Positrons; Spectroscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Ion Implantation Technology, 2000. Conference on

Conference_Location

Alpbach

Print_ISBN

0-7803-6462-7

Type

conf

DOI

10.1109/.2000.924238

Filename

924238