• DocumentCode
    3115327
  • Title

    Dosimetry enhancements for Varian´s high-energy ion implanters

  • Author

    Bisson, Jack ; Zhao, Zhiyong

  • Author_Institution
    Varian Semicond. Associates Inc., Newburyport, MA, USA
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    666
  • Lastpage
    669
  • Abstract
    Two of the most important aspects of ion implanters are dose accuracy and repeatability. Space limitation inside the MeV process chamber requires that a small disc Faraday cup be used. The old disc Faraday cup on these high-energy implanters exhibited dose inaccuracy at very low energies. A new effective disc faraday cup assembly was designed to correct the problem. One of the major issues associated with the old cup was the ability to capture larger beams at low energy implants. The new cup was designed to have a large enough opening to capture the whole beam in a wider working energy range. For higher energy implants, emphasis on the design had to be placed to prevent the escape of secondary and tertiary electrons. The edges for the cover and suppression aperture were designed to minimize the escape of the secondary/tertiary electrons. A strong magnetic field was added to help to suppress the secondary electrons and ions. Although the aspect ratio is less than 1:1, the data gathered from the tests on the new disc Faraday cup showed very good results. Since preventative maintenance must be performed periodically on the cup assembly, mechanical re-assembly can also be a factor in the repeatability process. Mechanical components were redesigned to minimize the repeatability issues
  • Keywords
    dosimetry; ion beams; ion implantation; particle beam diagnostics; 10 keV to 3 MeV; MeV process chamber; Varian high-energy ion implanters; aspect ratio; cup assembly; dose accuracy; dosimetry enhancements; ion dose repeatability; ion suppression; low energy implant beam capture; mechanical re-assembly; secondary electron suppression; secondary electrons; small disc Faraday cup; suppression aperture; tertiary electrons; Assembly; Dosimetry; Electron emission; Energy capture; Implants; Ion beams; Lifting equipment; Postal services; Preventive maintenance; Testing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Ion Implantation Technology, 2000. Conference on
  • Conference_Location
    Alpbach
  • Print_ISBN
    0-7803-6462-7
  • Type

    conf

  • DOI
    10.1109/.2000.924241
  • Filename
    924241