Selective-area MOVPE growth and optical properties of single InAsP quantum dots embedded in InP NWs

Author

Kobayashi, Yasunori ; Motohisa, Junichi ; Tomioka, Katsuhiro ; Hara, Shinjiro ; Hiruma, Kenji ; Fukui, Takashi

Author_Institution

Grad. Sch. of Inf. Sci. & Technol., Hokkaido Univ., Sapporo, Japan

fYear

2010

fDate

May 31 2010-June 4 2010

Firstpage

1

Lastpage

4

Abstract

We grew InAsP and InP/InAsP/InP heterostructure NWs (NWs) by selective-area MOVPE and carried out micro-photoluminescence (μ-PL) measurement. We investigated growth conditions for InAsP NWs and that embedded in InP NWs, and obtained exciton and biexciton emissions from InAsP QDs at optimized growth conditions. Negative binding energy of biexciton was observed due to the strong Coulomb interaction between the holes in the QDs.

Keywords

III-V semiconductors; MOCVD; arsenic compounds; biexcitons; binding energy; indium compounds; photoluminescence; semiconductor growth; semiconductor quantum dots; vapour phase epitaxial growth; Coulomb interaction; InAsP; InP-InAsP-InP; biexciton emissions; binding energy; microphotoluminescence; optical properties; quantum dots; selective-area MOVPE growth; Anisotropic magnetoresistance; Epitaxial growth; Epitaxial layers; Excitons; Indium phosphide; Information science; Nanoscale devices; Quantum dots; Semiconductor nanostructures; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide & Related Materials (IPRM), 2010 International Conference on

Conference_Location

Kagawa

ISSN

1092-8669

Print_ISBN

978-1-4244-5919-3

Type

conf

DOI

10.1109/ICIPRM.2010.5516180

Filename

5516180