Title :
Selective-area MOVPE growth and optical properties of single InAsP quantum dots embedded in InP NWs
Author :
Kobayashi, Yasunori ; Motohisa, Junichi ; Tomioka, Katsuhiro ; Hara, Shinjiro ; Hiruma, Kenji ; Fukui, Takashi
Author_Institution :
Grad. Sch. of Inf. Sci. & Technol., Hokkaido Univ., Sapporo, Japan
fDate :
May 31 2010-June 4 2010
Abstract :
We grew InAsP and InP/InAsP/InP heterostructure NWs (NWs) by selective-area MOVPE and carried out micro-photoluminescence (μ-PL) measurement. We investigated growth conditions for InAsP NWs and that embedded in InP NWs, and obtained exciton and biexciton emissions from InAsP QDs at optimized growth conditions. Negative binding energy of biexciton was observed due to the strong Coulomb interaction between the holes in the QDs.
Keywords :
III-V semiconductors; MOCVD; arsenic compounds; biexcitons; binding energy; indium compounds; photoluminescence; semiconductor growth; semiconductor quantum dots; vapour phase epitaxial growth; Coulomb interaction; InAsP; InP-InAsP-InP; biexciton emissions; binding energy; microphotoluminescence; optical properties; quantum dots; selective-area MOVPE growth; Anisotropic magnetoresistance; Epitaxial growth; Epitaxial layers; Excitons; Indium phosphide; Information science; Nanoscale devices; Quantum dots; Semiconductor nanostructures; Substrates;
Conference_Titel :
Indium Phosphide & Related Materials (IPRM), 2010 International Conference on
Conference_Location :
Kagawa
Print_ISBN :
978-1-4244-5919-3
DOI :
10.1109/ICIPRM.2010.5516180
