Sub-50NM InGaAs/InAlAs/InP HEMT for sub-millimeter wave power amplifier applications

Author

Mei, X.B. ; Radisic, V. ; Deal, W. ; Yoshida, W. ; Lee, J. ; Dang, L. ; Liu, P.H. ; Liu, W. ; Lange, M. ; Zhou, J. ; Uyeda, J. ; Leong, K. ; Lai, R.

Author_Institution

Northrop Grumman Corp., Redondo Beach, CA, USA

fYear

2010

fDate

May 31 2010-June 4 2010

Firstpage

1

Lastpage

3

Abstract

An InGaAs/InAlAs/InP HEMT with sub-50nm EBL gate has been developed for sub-millimeter wave (SMMW) power amplifier (PA) applications. In this paper, we report the device performance including high drain current, high gain, high breakdown voltage and scalability to large gate periphery, which are essential for achieving high output power at these frequencies. Excellent yield, process uniformity and repeatability are also demonstrated, which is critical for power amplifiers employing large number of devices and gate fingers. 10mW output power is demonstrated from a fixtured 338 GHz PA module.

Keywords

aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; submillimetre wave amplifiers; HEMT; InGaAs-InAlAs-InP; frequency 338 GHz; high electron mobility transistors; power 10 mW; process repeatability; process uniformity; submillimeter wave power amplifier applications; Fingers; Frequency; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; Performance gain; Power amplifiers; Power generation; Scalability; High electron mobility transisters (HEMT); InGaAs/InAlAs/InP; millimeter; power amplifier; sub-millimeter;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide & Related Materials (IPRM), 2010 International Conference on

Conference_Location

Kagawa

ISSN

1092-8669

Print_ISBN

978-1-4244-5919-3

Type

conf

DOI

10.1109/ICIPRM.2010.5516192

Filename

5516192