DocumentCode
3115971
Title
Electrothermal prediction model of Cu low k interconnection on glass substrate
Author
Siegert, L. ; Fiannaca, G. ; Roqueta, F. ; Gautier, G. ; Anceau, C.
Author_Institution
ST Microelectron. Tours R&D, Tours, France
fYear
2011
fDate
18-20 April 2011
Firstpage
42374
Lastpage
42495
Abstract
The aim of this work is to determine a joule heating prediction model for thick copper/Low-k interconnects on glass substrate technology. Experiments and simulations have been used to define thermal conductivities of our stack material from thermal resistance study. In a second time, the thermal resistance is used as quantitative response to predict the joule temperature in the strip. The experimental Rthermic results are well fit with a quadratic model which combined with the thermal coefficient of resistance formalism; allow us to define an analytical temperature joule heating formula. This methodology to define an analytical joule heating formula can be widely used to determine the maximum operating conditions and can be implemented in design rules manuals.
Keywords
glass; heating; interconnections; low-k dielectric thin films; metallisation; substrates; thermal analysis; thermal conductivity; Cu; electrothermal prediction model; glass substrate; joule heating prediction model; joule temperature; low k interconnection; quadratic model; resistance formalism; stack material; thermal coefficient; thermal conductivity; thermal resistance; Calibration; Copper; Equations; Heating; Mathematical model; Physics; Strips;
fLanguage
English
Publisher
ieee
Conference_Titel
Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE), 2011 12th International Conference on
Conference_Location
Linz
Print_ISBN
978-1-4577-0107-8
Type
conf
DOI
10.1109/ESIME.2011.5765765
Filename
5765765
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