• DocumentCode
    3115971
  • Title

    Electrothermal prediction model of Cu low k interconnection on glass substrate

  • Author

    Siegert, L. ; Fiannaca, G. ; Roqueta, F. ; Gautier, G. ; Anceau, C.

  • Author_Institution
    ST Microelectron. Tours R&D, Tours, France
  • fYear
    2011
  • fDate
    18-20 April 2011
  • Firstpage
    42374
  • Lastpage
    42495
  • Abstract
    The aim of this work is to determine a joule heating prediction model for thick copper/Low-k interconnects on glass substrate technology. Experiments and simulations have been used to define thermal conductivities of our stack material from thermal resistance study. In a second time, the thermal resistance is used as quantitative response to predict the joule temperature in the strip. The experimental Rthermic results are well fit with a quadratic model which combined with the thermal coefficient of resistance formalism; allow us to define an analytical temperature joule heating formula. This methodology to define an analytical joule heating formula can be widely used to determine the maximum operating conditions and can be implemented in design rules manuals.
  • Keywords
    glass; heating; interconnections; low-k dielectric thin films; metallisation; substrates; thermal analysis; thermal conductivity; Cu; electrothermal prediction model; glass substrate; joule heating prediction model; joule temperature; low k interconnection; quadratic model; resistance formalism; stack material; thermal coefficient; thermal conductivity; thermal resistance; Calibration; Copper; Equations; Heating; Mathematical model; Physics; Strips;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE), 2011 12th International Conference on
  • Conference_Location
    Linz
  • Print_ISBN
    978-1-4577-0107-8
  • Type

    conf

  • DOI
    10.1109/ESIME.2011.5765765
  • Filename
    5765765