Molecular beam epitaxy: development of a production-worthy technique

Summary form only given. In four decades since its conception, molecular beam epitaxy (MBE) has developed from a sophisticated leading-edge research technique to an established production-worthy technology. The driving force for this change has been the customer demand for wireless communications and the widespread uptake of mobile telephones. GaAs/AlGaAs epitaxial layers produced by MBE are used to fabricate the HBT and pHEMT devices employed as the power amplifiers in 2G, 2.5G and 3G cellular phones. 4th-generation devices based upon phosphorous and the antimony-containing species are forecast to play increasing roles in this and other high volume markets. The industry roadmaps indicate that ever more stringent demands in techniques, composition and concentration-profile control will be required. MBE is uniquely positioned to satisfy these demands and equipment designs continue to be evolved to meet these needs.