Title :
Modelling of metal degradation in power devices under active cycling conditions
Author :
Kanert, W. ; Pufall, R. ; Wittler, O. ; Dudek, R. ; Bouazza, M.
Author_Institution :
Infineon Technol. AG, Neubiberg, Germany
Abstract :
Metal degradation has recently received increased attention as a failure mechanism in power devices under active cycling conditions, i.e. under repeated pulsed voltage/current loads. Both electro-thermal and thermo-mechanical simulation are indispensable for understanding this mechanisms. The paper presents experimental and simulation data for a dedicated test structure. A suitable lifetime model has to go beyond a simple Coffin-Manson type model to capture the essential influencing parameters.
Keywords :
failure analysis; power MOSFET; semiconductor device reliability; Coffin-Manson type model; active cycling conditions; electro-thermal simulation; failure mechanism; metal degradation; power MOSFET; power devices; thermo-mechanical simulation; Atmospheric modeling; Degradation; Electromigration; Lead; Switches; Temperature measurement;
Conference_Titel :
Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE), 2011 12th International Conference on
Conference_Location :
Linz
Print_ISBN :
978-1-4577-0107-8
DOI :
10.1109/ESIME.2011.5765771