InP HEMT and HBT technology and applications

Author

Streit, Dwight ; Lai, Richard ; Oki, Aaron ; Gutierrez-Aitken, Augusto

Author_Institution

Space & Electron., TRW Inc., Redondo Beach, CA, USA

fYear

2002

fDate

18-19 Nov. 2002

Firstpage

14

Lastpage

17

Abstract

InP HEMT and InP HBT offer significant performance advantages for applications that range from microwave and millimeter-wave to fast digital and optoelectronic circuits. The improved transport characteristics, high transconductance, and optical integration properties of these devices hold great benefit for wireless and fiber-optic communications, radar, passive imaging and radiometer systems. We present an overview of recent results for InP devices and integrated circuits, including the current status of TRW´s, InP HEMT and HBT device and MMIC performance. The migration to new materials and process technology will enable volume production capability for high-performance applications to 200 GHz and beyond.

Keywords

III-V semiconductors; MMIC; heterojunction bipolar transistors; high electron mobility transistors; indium compounds; millimetre wave devices; millimetre wave imaging; radiometers; 200 GHz; InP; InP HBT technology; InP HEMT; MMIC; device frequency performance; device optical integration properties; fiber-optic communications; microwave/mm-wave/fast digital/optoelectronic circuits; passive imaging; power HEMT; radar; radiometer systems; transconductance; transport characteristics; wireless communications; HEMTs; Heterojunction bipolar transistors; Indium phosphide; Laser radar; Microwave circuits; Microwave devices; Millimeter wave integrated circuits; Millimeter wave radar; Millimeter wave technology; Transconductance;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices for Microwave and Optoelectronic Applications, 2002. EDMO 2002. The 10th IEEE International Symposium on

Print_ISBN

0-7803-7530-0

Type

conf

DOI

10.1109/EDMO.2002.1174923

Filename

1174923