Title :
High-efficiency silicon bipolar power transistors up to C-band
Author :
Carrara, Francesco ; Biondi, Tonio ; Scuderi, Antonino ; Palmisano, Giuseppe
Author_Institution :
Dipt. Elettrico Elettronico e Sistemistico, Catania Univ., Italy
Abstract :
This paper presents the large-signal characterization and modeling of a 0.8 μm 46 GHz-fT silicon bipolar technology for RF power applications up to C-band. A set of devices with optimized layout and vertical structure was fabricated for on-wafer load-pull testing at 1.9 GHz, 2.4 GHz, and 5.2 GHz. Under continuous-wave operation, a 56% power-added efficiency and 11 dB large-signal gain were achieved at a 22 dBm output power level by an 80 μm emitter length device (180 μm2 emitter area) operating at 5.2 GHz with a 2.7 V supply voltage.
Keywords :
UHF bipolar transistors; elemental semiconductors; microwave bipolar transistors; power bipolar transistors; semiconductor device measurement; semiconductor device models; silicon; 0.8 micron; 1.9 GHz; 11 dB; 2.4 GHz; 2.7 V; 46 GHz; 5.2 GHz; 56 percent; 80 micron; C-Band RF power applications; Si; continuous-wave operation power-added efficiency; device emitter length/area; device layout/vertical structure optimization; device supply voltage; high-efficiency silicon bipolar power transistors; large-signal gain; on-wafer load-pull testing; output power level; Fabrication; Isolation technology; Power generation; Power transistors; Radio frequency; Radiofrequency amplifiers; Silicon; Testing; Thermal conductivity; Voltage;
Conference_Titel :
Electron Devices for Microwave and Optoelectronic Applications, 2002. EDMO 2002. The 10th IEEE International Symposium on
Print_ISBN :
0-7803-7530-0
DOI :
10.1109/EDMO.2002.1174926
