Title :
Lateral junction waveguide type photodiode for membrane photonic circuits
Author :
Kondo, Daishi ; Okumura, Takashi ; Ito, H. ; Seunghun Lee ; Amemiya, Tomohiro ; Nishiyama, Nobuhiko ; Arai, Shigehisa
Author_Institution :
Dept. of Electr. & Electron. Eng., Tokyo Inst. of Technol., Tokyo, Japan
fDate :
May 31 2010-June 4 2010
Abstract :
A lateral junction type photodiode grown on a semi-insulating InP substrate was realized by 3-step OMVPE growth. The responsivity of 0.27 A/W, 3 dB bandwidth of 6 GHz and 7.5 GHz at a bias voltage of 0 V and -2 V, respectively, were obtained for the stripe width of 1.4 μm and device length of 220μm. An error free transmissions up to 6 Gbps at 0 V were confirmed.
Keywords :
III-V semiconductors; MOCVD; indium compounds; integrated optics; membranes; optical waveguide components; photodiodes; InP; OMVPE growth; frequency 6 GHz; frequency 7.5 GHz; lateral junction waveguide type photodiode; membrane photonic circuits; organometallic chemical vapour deposition; size 1.4 mum; size 220 mum; Biomembranes; Circuits; Electromagnetic waveguides; Gold; Optical devices; Optical interconnections; Optical pumping; Optical waveguides; Photodiodes; Waveguide junctions; Lateral junction; Membrane photonic circuits; Photodiode; Waveguide;
Conference_Titel :
Indium Phosphide & Related Materials (IPRM), 2010 International Conference on
Conference_Location :
Kagawa
Print_ISBN :
978-1-4244-5919-3
DOI :
10.1109/ICIPRM.2010.5516217
