Modeling of etch profile evolution including wafer charging effects using self consistent ion fluxes

Summary form only given. The effects of wafer charging on feature evolution are examined by calculating the fields produced by the charge deposited by ions and electrons within the features. These fields perturb the trajectories of charged particles and modify their flux to the walls of the feature. This can change the feature profile evolution and cause such effects as ion milling at the center of profiles and corner erosion. The effect of radial variations and nonuniformity in angular and energy distribution of the reactive fluxes on feature profiles and feature charging is discussed for p-Si etching in inductively-coupled plasma (ICP) sustained in chlorine gas mixtures. The effects of over- and under-wafer topography on etch profiles are discussed.