Experimental and numerical analysis of gate- and drain-lag phenomena in AlGaAs/InGaAs PHEMTs

Author

Basile, A.F. ; Mazzanti, A. ; Manzini, E. ; Verzellesi, G. ; Canali, C. ; Pierobon, R. ; Lanzieri, C.

Author_Institution

Dipt. di Ingegneria dell´´Informazione, Universitd di Modena e Reggio Emilia, Italy

fYear

2002

fDate

18-19 Nov. 2002

Firstpage

63

Lastpage

68

Abstract

Gate- and drain-lag phenomena are investigated in AlGaAs-InGaAs pseudomorphic HEMTs by comparing experimental transient and pulsed characteristics with simulated ones. A consistent interpretation for experimental data is provided, relying on the assumption that acceptor-like surface traps are present at the ungated surface between gate and source/drain contacts.

Keywords

III-V semiconductors; aluminium compounds; electronic engineering computing; gallium arsenide; high electron mobility transistors; semiconductor device measurement; semiconductor device models; transient response; AlGaAs-InGaAs; AlGaAs/InGaAs PHEMT drain-lag phenomena; acceptor-like surface traps; gate source/drain contact ungated surfaces; pseudomorphic HEMT gate-lag phenomena; pulsed PHEMT characteristics; transient response; Analytical models; Doping; Gallium arsenide; Heating; Indium gallium arsenide; Irrigation; Numerical analysis; PHEMTs; Transient analysis; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices for Microwave and Optoelectronic Applications, 2002. EDMO 2002. The 10th IEEE International Symposium on

Print_ISBN

0-7803-7530-0

Type

conf

DOI

10.1109/EDMO.2002.1174931

Filename

1174931