DocumentCode
3116350
Title
Diamond heat spreaders for high power devices with integrated temperature sensors
Author
Bonhaus, J. ; Borchert, D. ; Denisenko, A. ; Fahrner, W.R.
Author_Institution
Hagen Univ., Germany
fYear
1998
fDate
10-12 Mar 1998
Firstpage
139
Lastpage
146
Abstract
The use of a polycrystalline diamond film as a heat spreader in a laser diode array device was optimized with the three dimensional FEM software ABAQUS. A decrease in the thermal resistance of the device of nearly 50% could be achieved. A structured metallization was produced on top of the diamond to address each laser diode separately. Between the metallization strips, one thermistor per gap was inserted by doping the diamond film with boron by ion implantation. For calibration of these thermistors, their R(T) characteristics were investigated. In comparison with commercially available thermistors based on silicon or platinum, these thermistors showed a higher temperature coefficient of resistance and thus higher sensitivity. Additionally, the absolute resistance values were in a practicable range. This offers the possibility for industrial use. With the investigated temperature sensors, one can detect a wavelength shift of the emitted laser diode light of less than 0.1 nm due to a change of temperature
Keywords
calibration; cooling; diamond; finite element analysis; ion implantation; semiconductor device metallisation; semiconductor device models; semiconductor device packaging; semiconductor laser arrays; temperature sensors; thermal resistance; thermistors; ABAQUS 3D FEM software; C; C:B; boron-doped diamond film thermistor; diamond heat spreaders; emitted laser diode light wavelength shift; heat spreader optimization; integrated temperature sensors; ion implantation; laser diode; laser diode array; metallization strips; polycrystalline diamond film heat spreader; power devices; resistance-temperature characteristics; sensitivity; structured metallization; temperature coefficient of resistance; temperature sensors; thermal resistance; thermistor calibration; Boron; Diode lasers; Doping; Ion implantation; Metallization; Optical arrays; Semiconductor laser arrays; Temperature sensors; Thermal resistance; Thermistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Thermal Measurement and Management Symposium, 1998. SEMI-THERM Proceedings 1998., Fourteenth Annual IEEE
Conference_Location
San Diego, CA
ISSN
1065-2221
Print_ISBN
0-7803-4486-3
Type
conf
DOI
10.1109/STHERM.1998.660399
Filename
660399
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